Vishay SIJ Type P-Channel MOSFET, 44.4 A, 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3
- RS Stock No.:
- 279-9936P
- Mfr. Part No.:
- SIJ4819DP-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 60 units (supplied on a continuous strip)*
£125.10
(exc. VAT)
£150.12
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 60 - 96 | £2.085 |
| 100 - 236 | £1.858 |
| 240 - 996 | £1.818 |
| 1000 + | £1.78 |
*price indicative
- RS Stock No.:
- 279-9936P
- Mfr. Part No.:
- SIJ4819DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 44.4A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SIJ | |
| Package Type | SO-8L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.0207Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 73.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 44.4A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SIJ | ||
Package Type SO-8L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.0207Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 73.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.13mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Less voltage drop
Reduces conduction loss
Fully lead (Pb)-free device