Vishay Silicon N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-23 SI2392BDS-T1-GE3

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Subtotal 40 units (supplied on a continuous strip)*

£15.88

(exc. VAT)

£19.04

(inc. VAT)

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Units
Per unit
40 - 80£0.397
100 - 280£0.355
300 - 980£0.347
1000 +£0.34

*price indicative

Packaging Options:
RS Stock No.:
279-9893P
Mfr. Part No.:
SI2392BDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested