Infineon N-Channel MOSFET, 41 A, 700 V, 4-Pin PG-VSON-4 IPL65R230C7AUMA1
- RS Stock No.:
- 273-5350
- Mfr. Part No.:
- IPL65R230C7AUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£3.70
(exc. VAT)
£4.44
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 80 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | £1.85 | £3.70 |
| 50 - 98 | £1.54 | £3.08 |
| 100 - 248 | £1.425 | £2.85 |
| 250 - 998 | £1.32 | £2.64 |
| 1000 + | £1.29 | £2.58 |
*price indicative
- RS Stock No.:
- 273-5350
- Mfr. Part No.:
- IPL65R230C7AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 41 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | PG-VSON-4 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 41 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type PG-VSON-4 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon Power MOSFET constructed with CoolMOS™ revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Halogen free
Better efficiency
Pb free lead plating
High power density
Better control of the gate
Better efficiency
Pb free lead plating
High power density
Better control of the gate
