Infineon N-Channel MOSFET, 1899-12-31 06:00:00, 950 V, 3-Pin DPAK IPD95R1K2P7ATMA1
- RS Stock No.:
- 273-2785
- Mfr. Part No.:
- IPD95R1K2P7ATMA1
- Brand:
- Infineon
Currently unavailable
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- RS Stock No.:
- 273-2785
- Mfr. Part No.:
- IPD95R1K2P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1899-12-31 06:00:00 | |
| Maximum Drain Source Voltage | 950 V | |
| Package Type | TO-252 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 1899-12-31 06:00:00 | ||
Maximum Drain Source Voltage 950 V | ||
Package Type TO-252 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET is a 950V CoolMOS P7 SJ power device. The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best in class performance with state of the art ease of use. Enabling higher power density designs, BOM savings and lower assembly costs. It provides better production yield by reducing ESD related failures.
Less production issues
Fully optimized portfolio
Easy to drive and to parallel
Integrated Zener Diode ESD protection
Fully optimized portfolio
Easy to drive and to parallel
Integrated Zener Diode ESD protection
