Infineon N-Channel MOSFET, 82 A, 650 V, 3-Pin D2PAK IPB65R115CFD7AATMA1
- RS Stock No.:
- 273-2779
- Mfr. Part No.:
- IPB65R115CFD7AATMA1
- Brand:
- Infineon
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- RS Stock No.:
- 273-2779
- Mfr. Part No.:
- IPB65R115CFD7AATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 82 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-263 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 82 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-263 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET is a 650V CoolMOS CFD7A power device, It is a Infineon latest generation of market leading automotive qualified high voltage CoolMOS MOSFETs. In addition to the well known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFD7A series provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase shift full bridge and LLC.
Lower switching losses
High quality and reliability
100 percent avalanche tested
Optimized for higher battery voltages
High quality and reliability
100 percent avalanche tested
Optimized for higher battery voltages
