Vishay Dual Silicon N-Channel MOSFET, 26.2 A, 150 V, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
- RS Stock No.:
- 268-8349P
- Mfr. Part No.:
- SISS5710DN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£83.20
(exc. VAT)
£99.85
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 6,000 unit(s), ready to ship
Units | Per unit |
|---|---|
| 50 - 95 | £1.664 |
| 100 - 245 | £1.338 |
| 250 - 995 | £1.31 |
| 1000 + | £0.988 |
*price indicative
- RS Stock No.:
- 268-8349P
- Mfr. Part No.:
- SISS5710DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 26.2 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | PowerPAK 1212-8S | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 26.2 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type PowerPAK 1212-8S | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
ROHS compliant
UIS tested 100 percent