Vishay Dual Silicon N-Channel MOSFET, 8.8 A, 100 V, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3
- RS Stock No.:
- 268-8340P
- Mfr. Part No.:
- SIS112LDN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£23.40
(exc. VAT)
£28.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
50 - 75 | £0.468 |
100 - 225 | £0.356 |
250 - 975 | £0.349 |
1000 + | £0.216 |
*price indicative
- RS Stock No.:
- 268-8340P
- Mfr. Part No.:
- SIS112LDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 8.8 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | PowerPAK 1212-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.8 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PowerPAK 1212-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is single configuration MOSFET. It is lead free and halogen free and It is used an application as primary side switch, motor drive switch and boost converter.
Tuned for the lowest figure of merit
ROHS compliant
UIS tested 100 percent
ROHS compliant
UIS tested 100 percent