Vishay Dual Silicon N-Channel MOSFET, 174 A, 150 V, 4-Pin PowerPAK 8 x 8L SIJH5700E-T1-GE3
- RS Stock No.:
- 268-8325P
- Mfr. Part No.:
- SIJH5700E-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£254.00
(exc. VAT)
£305.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 1,870 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
50 - 99 | £5.08 |
100 - 249 | £4.16 |
250 - 999 | £4.08 |
1000 + | £3.00 |
*price indicative
- RS Stock No.:
- 268-8325P
- Mfr. Part No.:
- SIJH5700E-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 174 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | PowerPAK 8 x 8L | |
Mounting Type | Surface Mount | |
Pin Count | 4 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 2 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 174 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type PowerPAK 8 x 8L | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is fully lead Pb free device. It is used in applications such as synchronous rectification, motor drive control, battery management.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
ROHS compliant
UIS tested 100 percent