Vishay Dual Silicon N-Channel MOSFET, 35 A, 600 V, 3-Pin D2PAK SIHB080N60E-GE3
- RS Stock No.:
- 268-8290P
- Mfr. Part No.:
- SIHB080N60E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£43.00
(exc. VAT)
£51.60
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,038 unit(s), ready to ship
Units | Per unit |
|---|---|
| 10 - 18 | £4.30 |
| 20 - 98 | £4.215 |
| 100 - 498 | £3.525 |
| 500 + | £3.00 |
*price indicative
- RS Stock No.:
- 268-8290P
- Mfr. Part No.:
- SIHB080N60E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-263 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-263 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp
Low effective capacitance
Avalanche energy rated
Low figure of merit
Avalanche energy rated
Low figure of merit