Vishay Dual Silicon N-Channel MOSFET, 227 A, 60 V, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- RS Stock No.:
- 268-8285P
- Mfr. Part No.:
- SIDR626EP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£147.75
(exc. VAT)
£177.30
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 6,024 unit(s), ready to ship
Units | Per unit |
|---|---|
| 50 - 98 | £2.955 |
| 100 - 248 | £2.42 |
| 250 - 998 | £2.37 |
| 1000 + | £1.89 |
*price indicative
- RS Stock No.:
- 268-8285P
- Mfr. Part No.:
- SIDR626EP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 227 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerPAK SO-8DC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 227 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerPAK SO-8DC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- TW
The Vishay N channel TrenchFET generation 4 power MOSFET has top side cooling feature provides additional venue for thermal transfer. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.
Tuned for the lowest figure of merit
ROHS compliant
UIS tested 100 percent
ROHS compliant
UIS tested 100 percent