ROHM R6055VNX Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 265-5420P
- Mfr. Part No.:
- R6055VNXC7G
- Brand:
- ROHM
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£159.00
(exc. VAT)
£191.00
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 959 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 99 | £3.18 |
| 100 - 249 | £2.63 |
| 250 - 499 | £2.59 |
| 500 + | £2.29 |
*price indicative
- RS Stock No.:
- 265-5420P
- Mfr. Part No.:
- R6055VNXC7G
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | R6055VNX | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.071Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Pb-Free Plating, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series R6055VNX | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.071Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Pb-Free Plating, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple