STMicroelectronics Dual GaN MOSFET Transistor, 15 A, 750 V, 4-Pin Reel SGT120R65AL

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Subtotal (1 pack of 2 units)*

£9.19

(exc. VAT)

£11.028

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48£4.595£9.19
50 - 98£4.13£8.26
100 - 248£4.05£8.10
250 - 998£3.965£7.93
1000 +£3.885£7.77

*price indicative

Packaging Options:
RS Stock No.:
265-1035
Mfr. Part No.:
SGT120R65AL
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

750 V

Package Type

Reel

Mounting Type

Surface Mount, Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

GaN

COO (Country of Origin):
CN
The STMicroelectronics e-mode PowerGaN transistor is combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge