Infineon HEXFET Dual Silicon N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF
- RS Stock No.:
- 262-6778
- Mfr. Part No.:
- IRFU4510PBF
- Brand:
- Infineon
Subtotal (1 tube of 3000 units)*
£1,437.00
(exc. VAT)
£1,725.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 16 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 3000 + | £0.479 | £1,437.00 |
*price indicative
- RS Stock No.:
- 262-6778
- Mfr. Part No.:
- IRFU4510PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 56 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | IPAK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type IPAK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
The Infineon power MOSFET provides benefits such as improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Enhanced body diode dV/dt and dI/dt capability
