Infineon HEXFET Dual Silicon N-Channel MOSFET, 2.8 A, 55 V, 4-Pin SOT-223 IRFL024NTRPBF
- RS Stock No.:
- 262-6764P
- Mfr. Part No.:
- IRFL024NTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 125 units (supplied on a continuous strip)*
£45.875
(exc. VAT)
£55.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,250 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
125 - 225 | £0.367 |
250 - 600 | £0.351 |
625 - 1225 | £0.336 |
1250 + | £0.212 |
*price indicative
- RS Stock No.:
- 262-6764P
- Mfr. Part No.:
- IRFL024NTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 2.8 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | SOT-223 | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 4 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 2 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.8 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Ultra low on-resistance
Dynamic dv/dt rating
Fasts switching
Fully avalanche rated
Dynamic dv/dt rating
Fasts switching
Fully avalanche rated