Infineon HEXFET Dual Silicon N-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220 Full-Pak IRFIZ44NPBF
- RS Stock No.:
- 262-6762P
- Mfr. Part No.:
- IRFIZ44NPBF
- Brand:
- Infineon
Subtotal 10 units (supplied in a tube)*
£8.28
(exc. VAT)
£9.94
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 10 + | £0.828 |
*price indicative
- RS Stock No.:
- 262-6762P
- Mfr. Part No.:
- IRFIZ44NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | TO-220 Full-Pak | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type TO-220 Full-Pak | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fully avalanche rated
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