Infineon HEXFET Dual Silicon N-Channel MOSFET, 26 A, 200 V, 3-Pin TO-220 Full-Pak IRFI4227PBF
- RS Stock No.:
- 262-6757P
- Mfr. Part No.:
- IRFI4227PBF
- Brand:
- Infineon
Bulk discount available
Subtotal 20 units (supplied in a tube)*
£50.70
(exc. VAT)
£60.84
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,964 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
20 - 48 | £2.535 |
50 - 98 | £2.37 |
100 - 198 | £2.205 |
200 + | £2.035 |
*price indicative
- RS Stock No.:
- 262-6757P
- Mfr. Part No.:
- IRFI4227PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 26 A | |
Maximum Drain Source Voltage | 200 V | |
Series | HEXFET | |
Package Type | TO-220 Full-Pak | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 2 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 26 A | ||
Maximum Drain Source Voltage 200 V | ||
Series HEXFET | ||
Package Type TO-220 Full-Pak | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
The Infineon power MOSFET is specifically designed for sustain energy recovery and pass switch applications in plasma display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.
150 degree Celsius operating junction temperature
High repetitive peak current capability
High repetitive peak current capability