Infineon HEXFET Silicon N-Channel MOSFET, 24 A, 100 V, 3-Pin TO-220 Full-Pak IRFI1310NPBF

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Subtotal 50 units (supplied in a tube)*

£57.60

(exc. VAT)

£69.10

(inc. VAT)

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  • Plus 3,830 unit(s) shipping from 06 October 2025
  • Plus 999,996,165 unit(s) shipping from 13 October 2025
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Per unit
50 - 120£1.152
125 - 245£1.074
250 - 495£1.01
500 +£0.832

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Packaging Options:
RS Stock No.:
262-6752P
Mfr. Part No.:
IRFI1310NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220 Full-Pak

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Fully avalanche rated
High voltage isolation 2.5KVRMS