Infineon HEXFET Silicon N-Channel MOSFET, 51 A, 150 V, 3-Pin TO-220AB IRFB52N15DPBF

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Subtotal 25 units (supplied in a tube)*

£46.60

(exc. VAT)

£55.925

(inc. VAT)

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  • Plus 715 unit(s) shipping from 10 November 2025
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Units
Per unit
25 - 45£1.864
50 - 120£1.738
125 - 245£1.614
250 +£1.512

*price indicative

Packaging Options:
RS Stock No.:
262-6748P
Mfr. Part No.:
IRFB52N15DPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

150 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters and plasma display panel.

Fully characterized avalanche voltage and current