Infineon HEXFET Silicon N-Channel MOSFET, 56 A, 200 V, 3-Pin TO-220AB IRFB260NPBF

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Subtotal 50 units (supplied in a tube)*

£96.80

(exc. VAT)

£116.15

(inc. VAT)

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50 - 120£1.936
125 - 245£1.828
250 - 495£1.698
500 +£1.57

*price indicative

Packaging Options:
RS Stock No.:
262-6746P
Mfr. Part No.:
IRFB260NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

200 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current