Infineon HEXFET Dual Silicon N-Channel MOSFET, 6.9 A, 100 V, 8-Pin SO-8 IRF7473TRPBF

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Subtotal 50 units (supplied on a continuous strip)*

£52.25

(exc. VAT)

£62.70

(inc. VAT)

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  • Shipping from 07 January 2026
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Units
Per unit
50 - 90£1.045
100 - 240£1.023
250 - 490£0.715
500 +£0.561

*price indicative

Packaging Options:
RS Stock No.:
262-6738P
Mfr. Part No.:
IRF7473TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6.9 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

Silicon

The Infineon power MOSFET has benefits such as low gate drive current due to improved gate charge characteristic, improved avalanche ruggedness and dynamic dv/dt and fully characterized avalanche voltage and current.

Ultra low on-resistance
High speed switching