Infineon HEXFET Dual Silicon N-Channel MOSFET, 6.9 A, 100 V, 8-Pin SO-8 IRF7473TRPBF
- RS Stock No.:
- 262-6738P
- Mfr. Part No.:
- IRF7473TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£52.25
(exc. VAT)
£62.70
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 07 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
50 - 90 | £1.045 |
100 - 240 | £1.023 |
250 - 490 | £0.715 |
500 + | £0.561 |
*price indicative
- RS Stock No.:
- 262-6738P
- Mfr. Part No.:
- IRF7473TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 6.9 A | |
Maximum Drain Source Voltage | 100 V | |
Series | HEXFET | |
Package Type | SO-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 2 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.9 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
The Infineon power MOSFET has benefits such as low gate drive current due to improved gate charge characteristic, improved avalanche ruggedness and dynamic dv/dt and fully characterized avalanche voltage and current.
Ultra low on-resistance
High speed switching
High speed switching