Infineon HEXFET Dual Silicon N-Channel MOSFET, 1.9 A, 150 V, 8-Pin SO-8 IRF7451TRPBF
- RS Stock No.:
- 262-6734P
- Mfr. Part No.:
- IRF7451TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£57.40
(exc. VAT)
£68.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,760 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
100 - 240 | £0.574 |
250 - 490 | £0.55 |
500 - 990 | £0.525 |
1000 + | £0.332 |
*price indicative
- RS Stock No.:
- 262-6734P
- Mfr. Part No.:
- IRF7451TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 1.9 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | SO-8 | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.
Fully characterized avalanche voltage and current