Infineon HEXFET Dual Silicon N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB IRF2807ZPBF
- RS Stock No.:
- 262-6726P
- Mfr. Part No.:
- IRF2807ZPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied in a tube)*
£47.50
(exc. VAT)
£57.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 400 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
50 - 120 | £0.95 |
125 - 245 | £0.888 |
250 - 495 | £0.826 |
500 + | £0.762 |
*price indicative
- RS Stock No.:
- 262-6726P
- Mfr. Part No.:
- IRF2807ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 75 A | |
Maximum Drain Source Voltage | 75 V | |
Series | HEXFET | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 75 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax
Repetitive avalanche allowed up to Tjmax