Infineon HEXFET Dual Silicon N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB IRF2807ZPBF

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Subtotal 50 units (supplied in a tube)*

£47.50

(exc. VAT)

£57.00

(inc. VAT)

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50 - 120£0.95
125 - 245£0.888
250 - 495£0.826
500 +£0.762

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Packaging Options:
RS Stock No.:
262-6726P
Mfr. Part No.:
IRF2807ZPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

75 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

2

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax