Infineon HEXFET Dual Silicon N-Channel MOSFET, 160 A, 40 V, 7-Pin D2PAK IRF2804STRL7PP
- RS Stock No.:
- 262-6724P
- Mfr. Part No.:
- IRF2804STRL7PP
- Brand:
- Infineon
Subtotal 5 units (supplied on a continuous strip)*
£4.22
(exc. VAT)
£5.065
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 480 unit(s) ready to ship
- Plus 999,999,515 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 + | £0.844 |
*price indicative
- RS Stock No.:
- 262-6724P
- Mfr. Part No.:
- IRF2804STRL7PP
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 160 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | HEXFET | |
| Package Type | D2PAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 160 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type D2PAK | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax
Repetitive avalanche allowed up to Tjmax
