Infineon HEXFET Silicon N-Channel MOSFET, 210 A, 40 V, 3-Pin TO-220AB IRF2204PBF
- RS Stock No.:
- 262-6722P
- Mfr. Part No.:
- IRF2204PBF
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£47.05
(exc. VAT)
£56.45
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,025 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £1.882 |
| 50 - 120 | £1.76 |
| 125 - 245 | £1.644 |
| 250 + | £1.504 |
*price indicative
- RS Stock No.:
- 262-6722P
- Mfr. Part No.:
- IRF2204PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 210 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 210 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Ultra low on-resistance
Dynamic dv/dt rating
Repetitive avalanche allowed up to Tjmax
Dynamic dv/dt rating
Repetitive avalanche allowed up to Tjmax
