Infineon Dual SiC N-Channel MOSFET, 293 A, 60 V, 7-Pin PG-TO263-7 IPF010N06NF2SATMA1
- RS Stock No.:
- 262-5874P
- Mfr. Part No.:
- IPF010N06NF2SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£29.40
(exc. VAT)
£35.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 756 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
10 - 24 | £2.94 |
25 - 49 | £2.78 |
50 - 99 | £2.58 |
100 + | £2.38 |
*price indicative
- RS Stock No.:
- 262-5874P
- Mfr. Part No.:
- IPF010N06NF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 293 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | PG-TO263-7 | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 2 | |
Transistor Material | SiC | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 293 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PG-TO263-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material SiC | ||
The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.
Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
RoHS compliant
Halogen free according to IEC61249-2-21