Infineon Dual SiC N-Channel MOSFET, 293 A, 60 V, 7-Pin PG-TO263-7 IPF010N06NF2SATMA1

Bulk discount available

Subtotal 10 units (supplied on a continuous strip)*

£29.40

(exc. VAT)

£35.30

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 756 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
10 - 24£2.94
25 - 49£2.78
50 - 99£2.58
100 +£2.38

*price indicative

Packaging Options:
RS Stock No.:
262-5874P
Mfr. Part No.:
IPF010N06NF2SATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

293 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21