Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1

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Subtotal 50 units (supplied on a continuous strip)*

£50.60

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£60.70

(inc. VAT)

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50 - 120£1.012
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250 - 495£0.878
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Packaging Options:
RS Stock No.:
262-5863P
Mfr. Part No.:
IPD028N06NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

139 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21