Infineon Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 IPD023N04NF2SATMA1
- RS Stock No.:
- 262-5861P
- Mfr. Part No.:
- IPD023N04NF2SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£46.30
(exc. VAT)
£55.55
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 410 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
50 - 120 | £0.926 |
125 - 245 | £0.864 |
250 - 495 | £0.80 |
500 + | £0.416 |
*price indicative
- RS Stock No.:
- 262-5861P
- Mfr. Part No.:
- IPD023N04NF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 143 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | PG-TO252-3 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | SiC | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 143 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PG-TO252-3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 2 | ||
The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.
Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
RoHS compliant
Halogen free according to IEC61249-2-21