Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
- RS Stock No.:
- 262-5859P
- Mfr. Part No.:
- IPB029N06NF2SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£66.40
(exc. VAT)
£79.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 550 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 120 | £1.328 |
| 125 - 245 | £1.242 |
| 250 - 495 | £1.154 |
| 500 + | £1.066 |
*price indicative
- RS Stock No.:
- 262-5859P
- Mfr. Part No.:
- IPB029N06NF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PG-TO263-3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 2 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PG-TO263-3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material SiC | ||
The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.
Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
RoHS compliant
Halogen free according to IEC61249-2-21
