Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
- RS Stock No.:
- 262-5857P
- Mfr. Part No.:
- IPB023N04NF2SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (10 reels of 5 units)**. Quantities below 150 on continuous strip
£72.50
(exc. VAT)
£87.00
(inc. VAT)
795 In stock - FREE next working day delivery available*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit |
---|---|
50 - 120 | £1.29 |
125 - 245 | £1.204 |
250 - 495 | £1.132 |
500 + | £1.044 |
**price indicative
- RS Stock No.:
- 262-5857P
- Mfr. Part No.:
- IPB023N04NF2SATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 122 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | PG-TO263-3 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 2 | |
Transistor Material | SiC | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 122 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PG-TO263-3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material SiC | ||