Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1

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Subtotal 25 units (supplied on a continuous strip)*

£36.90

(exc. VAT)

£44.275

(inc. VAT)

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25 - 45£1.476
50 - 120£1.378
125 - 245£1.28
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Packaging Options:
RS Stock No.:
262-5855P
Mfr. Part No.:
IPB018N06NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21