Infineon Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 IPB013N06NF2SATMA1
- RS Stock No.:
- 262-5848P
- Mfr. Part No.:
- IPB013N06NF2SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£56.90
(exc. VAT)
£68.28
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 798 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 48 | £2.845 |
| 50 - 98 | £2.65 |
| 100 - 198 | £2.465 |
| 200 + | £2.305 |
*price indicative
- RS Stock No.:
- 262-5848P
- Mfr. Part No.:
- IPB013N06NF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 190 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PG-TO263-3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 190 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PG-TO263-3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 2 | ||
The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.
Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
RoHS compliant
Halogen free according to IEC61249-2-21
