Infineon Dual SiC N-Channel MOSFET, 197 A, 40 V, 3-Pin PG-TO263-3 IPB012N04NF2SATMA1
- RS Stock No.:
- 262-5845P
- Mfr. Part No.:
- IPB012N04NF2SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£38.50
(exc. VAT)
£46.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 800 unit(s) ready to ship
- Plus 999,999,198 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
20 - 48 | £1.925 |
50 - 98 | £1.81 |
100 - 198 | £1.67 |
200 + | £1.555 |
*price indicative
- RS Stock No.:
- 262-5845P
- Mfr. Part No.:
- IPB012N04NF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 197 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | PG-TO263-3 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | SiC | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 197 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PG-TO263-3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 2 | ||
The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.
Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
RoHS compliant
Halogen free according to IEC61249-2-21