Infineon Dual SiC N-Channel MOSFET, 197 A, 40 V, 3-Pin PG-TO263-3 IPB012N04NF2SATMA1

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Subtotal 20 units (supplied on a continuous strip)*

£38.50

(exc. VAT)

£46.20

(inc. VAT)

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  • 800 unit(s) ready to ship
  • Plus 999,999,198 unit(s) shipping from 02 January 2026
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Per unit
20 - 48£1.925
50 - 98£1.81
100 - 198£1.67
200 +£1.555

*price indicative

Packaging Options:
RS Stock No.:
262-5845P
Mfr. Part No.:
IPB012N04NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

197 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21