Infineon Dual SiC N-Channel MOSFET, 201 A, 40 V, 3-Pin PG-TO263-3 IPB011N04NF2SATMA1
- RS Stock No.:
- 262-5842
- Mfr. Part No.:
- IPB011N04NF2SATMA1
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£962.40
(exc. VAT)
£1,155.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | £1.203 | £962.40 |
*price indicative
- RS Stock No.:
- 262-5842
- Mfr. Part No.:
- IPB011N04NF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 201 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PG-TO263-3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 201 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PG-TO263-3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 2 | ||
The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.
Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
RoHS compliant
Halogen free according to IEC61249-2-21
