STMicroelectronics N-Channel MOSFET, 7 A, 1200 V Tape and Reel STH12N120K5-2AG
- RS Stock No.:
- 261-5047P
- Mfr. Part No.:
- STH12N120K5-2AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£96.70
(exc. VAT)
£116.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 566 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
10 - 99 | £9.67 |
100 - 249 | £9.18 |
250 - 499 | £8.72 |
500 + | £8.29 |
*price indicative
- RS Stock No.:
- 261-5047P
- Mfr. Part No.:
- STH12N120K5-2AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 7 A | |
Maximum Drain Source Voltage | 1200 V | |
Package Type | Tape and Reel | |
Mounting Type | Surface Mount | |
Channel Mode | Enhancement | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type Tape and Reel | ||
Mounting Type Surface Mount | ||
Channel Mode Enhancement | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
AEC-Q101 qualified
Industrys lowest RDS(on) x area
Industrys best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Industrys lowest RDS(on) x area
Industrys best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested