STMicroelectronics Silicon N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 STP65N150M9
- RS Stock No.:
- 261-4760P
- Mfr. Part No.:
- STP65N150M9
- Brand:
- STMicroelectronics
Subtotal 1 unit (supplied in a tube)*
£3.51
(exc. VAT)
£4.21
(inc. VAT)
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In Stock
- 96 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £3.51 |
*price indicative
- RS Stock No.:
- 261-4760P
- Mfr. Part No.:
- STP65N150M9
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- CN
N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.