Infineon HEXFET Silicon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF
- RS Stock No.:
- 260-5869P
- Mfr. Part No.:
- IRFP3006PBF
- Brand:
- Infineon
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Units | Per unit |
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| 50 - 99 | £4.05 |
| 100 + | £3.77 |
*price indicative
- RS Stock No.:
- 260-5869P
- Mfr. Part No.:
- IRFP3006PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 270 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.5 m? | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 375 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ± 20 V | |
| Typical Gate Charge @ Vgs | 200 nC | |
| Length | 15.87mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.31mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Silicon | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 270 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.5 m? | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ± 20 V | ||
Typical Gate Charge @ Vgs 200 nC | ||
Length 15.87mm | ||
Number of Elements per Chip 1 | ||
Width 5.31mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Silicon | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Infineon HEXFET Series MOSFET, 270A Maximum Continuous Drain Current, 60V Maximum Drain Source Voltage - IRFP3006PBF
This high-performance MOSFET is a critical component for modern electronic applications, designed with enhanced efficiency and reliability in mind. The dimensions of this TO-247 package include a length of 15.87mm, width of 5.31mm, and height of 20.7mm. It operates effectively in a variety of environments and contributes significant value in power management situations.
Features & Benefits
• High continuous drain current rated at 270A for demanding requirements
• 60V drain-source capability for versatile usage
• Maximum power dissipation of 375W supports robust performance
• Enhanced avalanche capability for better system protection
• Through-hole mounting ensures solid and dependable installation
• 60V drain-source capability for versatile usage
• Maximum power dissipation of 375W supports robust performance
• Enhanced avalanche capability for better system protection
• Through-hole mounting ensures solid and dependable installation
Applications
• Utilised in high-efficiency synchronous rectification systems
• Ideal for uninterruptible power supplies to ensure reliability
• Effective in high-speed power switching
• Suitable for hard-switched and high-frequency circuitry
• Ideal for uninterruptible power supplies to ensure reliability
• Effective in high-speed power switching
• Suitable for hard-switched and high-frequency circuitry
What thermal performance can be expected under continuous operating conditions?
With a maximum operating temperature of +175°C, it reliably handles high thermal loads, while the thermal resistance from junction to case supports efficient heat dissipation.
How does the gate threshold voltage contribute to its performance in circuits?
It features a maximum gate threshold voltage of 4V, ensuring that control signals activate the MOSFET effectively, providing synergy with lower voltage control circuits.
What are the implications of the low Rds(on) for circuit efficiency?
A low on-resistance of 2.5mΩ significantly reduces energy losses, enhancing overall circuit efficiency, especially in power-intensive applications, which translates into lower heat generation and improved performance sustainability.
