Infineon N-Channel MOSFET, 102 A, 30 V PG-TSDSON-8-FL BSZ0902NSIATMA1
- RS Stock No.:
- 259-1483
- Mfr. Part No.:
- BSZ0902NSIATMA1
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 259-1483
- Mfr. Part No.:
- BSZ0902NSIATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 102 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PG-TSDSON-8-FL | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 102 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PG-TSDSON-8-FL | ||
Mounting Type Surface Mount | ||
The Infineon power MOSFET has ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. It is tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life.
Ultra low gate and output charge
Lowest on-state resistance in small footprint packages
Easy to design in
Increased battery lifetime
Improved EMI behaviour making external snubber networks obsolete
Saving costs
Saving space
Reducing power losses
Lowest on-state resistance in small footprint packages
Easy to design in
Increased battery lifetime
Improved EMI behaviour making external snubber networks obsolete
Saving costs
Saving space
Reducing power losses
