Infineon N-Channel MOSFET, 40 A, 30 V PG-TSDSON-8-FL BSZ019N03LSATMA1
- RS Stock No.:
- 259-1478
- Mfr. Part No.:
- BSZ019N03LSATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£2,040.00
(exc. VAT)
£2,450.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 10 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
5000 + | £0.408 | £2,040.00 |
*price indicative
- RS Stock No.:
- 259-1478
- Mfr. Part No.:
- BSZ019N03LSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 40 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | PG-TSDSON-8-FL | |
Mounting Type | Surface Mount | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PG-TSDSON-8-FL | ||
Mounting Type Surface Mount | ||
The Infineon n channel power MOSFET, It is ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make optimos 30V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. optimos 30V products are tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life. Available in half-bridge configuration.
Increased battery lifetime
Improved EMI behaviour making external snubber networks obsolete
Saving costs
Saving space
Reducing power losses
Improved EMI behaviour making external snubber networks obsolete
Saving costs
Saving space
Reducing power losses