Infineon HEXFET MOSFET, 8.7 A, 150 V TO-220 IRFI4019H-117PXKMA1
- RS Stock No.:
- 258-3974P
- Mfr. Part No.:
- IRFI4019H-117PXKMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 258-3974P
- Mfr. Part No.:
- IRFI4019H-117PXKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Drain Current | 8.7 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Drain Current 8.7 A | ||
Maximum Drain Source Voltage 150 V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mounting Type Surface Mount | ||
The Infineon digital audio MOSFET half-bridge is specifically designed for class D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Further more, gate charge, body-diode reverse recovery, and internal gate resistance are optimized to improve key class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.
Low RDS(on)
Dual N-Channel MOSFET
Integrated Half Bridge package
Low Qrr
Environmentally friendly
High power density
Integrated design
Board savings
Low EMI
Dual N-Channel MOSFET
Integrated Half Bridge package
Low Qrr
Environmentally friendly
High power density
Integrated design
Board savings
Low EMI
