Infineon N-Channel MOSFET, 205 A, 40 V PG-TTFN IQE013N04LM6CGATMA1
- RS Stock No.:
- 258-3923P
- Mfr. Part No.:
- IQE013N04LM6CGATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£39.80
(exc. VAT)
£47.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 4,950 unit(s) shipping from 06 October 2025
- Plus 999,995,048 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 48 | £1.99 |
| 50 - 98 | £1.855 |
| 100 - 198 | £1.725 |
| 200 + | £1.615 |
*price indicative
- RS Stock No.:
- 258-3923P
- Mfr. Part No.:
- IQE013N04LM6CGATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 205 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PG-TTFN | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 205 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PG-TTFN | ||
Mounting Type Surface Mount | ||
The Infineon OptiMOS power MOSFET 40V in a 3.3x3.3 PQFN Source-Down Centre-Gate package. This best-in-class power MOSFET challenges the status quo in power density and form factor in the end application. One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling an ergonomic design and optimizing the end user experience. Moving the inverter from the handle into the head simultaneously minimizes the volume of the power tool motor housing while keeping the torque of the tool at a reasonably high level for quick and easy action.
High current capability
More efficient use of PBC area
Highest power density and performance
Optimized footprint for MOSFET parallelization with centre-gate
More efficient use of PBC area
Highest power density and performance
Optimized footprint for MOSFET parallelization with centre-gate
