Infineon N-Channel MOSFET, 120 A, 80 V PG-TDSON IPP034N08N5AKSA1
- RS Stock No.:
- 258-3891P
- Mfr. Part No.:
- IPP034N08N5AKSA1
- Brand:
- Infineon
Subtotal 2 units (supplied in a tube)*
£1.56
(exc. VAT)
£1.88
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 328 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 2 + | £0.78 |
*price indicative
- RS Stock No.:
- 258-3891P
- Mfr. Part No.:
- IPP034N08N5AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PG-TDSON | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PG-TDSON | ||
Mounting Type Surface Mount | ||
The Infineon OptiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS 5 80 V MOSFETs offer the industry's lowest RDS(on). Additionally, compared to the previous generation, OptiMOS 5 80 V has an RDS(on) reduction of up to 43%.
Ideal for high switching frequency
Output capacitance reduction of up to 44 %
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Output capacitance reduction of up to 44 %
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
