Infineon MOSFET, 211 A, 650 V PG-TO263 IPBE65R050CFD7AATMA1

View all MOSFETs

Subtotal (1 reel of 1000 units)*

£2,648.00

(exc. VAT)

£3,178.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 19 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 +£2.648£2,648.00

*price indicative

RS Stock No.:
258-3826
Mfr. Part No.:
IPBE65R050CFD7AATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Drain Current

211 A

Maximum Drain Source Voltage

650 V

Package Type

PG-TO263

Mounting Type

Surface Mount

The Infineon CoolMOS C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.

Best-in-class quality and reliability
Higher breakdown voltage
High peak current capability


Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today