Infineon N-Channel MOSFET, 136 A, 150 V PG-TO263-7 IPB060N15N5ATMA1
- RS Stock No.:
- 258-3792
- Mfr. Part No.:
- IPB060N15N5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£2,544.00
(exc. VAT)
£3,053.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
1000 + | £2.544 | £2,544.00 |
*price indicative
- RS Stock No.:
- 258-3792
- Mfr. Part No.:
- IPB060N15N5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 136 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | PG-TO263-7 | |
Mounting Type | Surface Mount | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 136 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type PG-TO263-7 | ||
Mounting Type Surface Mount | ||
The Infineon OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklifts and e-scooters, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on) and Qrr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge increases commutation ruggedness.
Lower output charge
Ultra-low reverse recovery charge
Reduced paralleling
Higher power density designs
Ultra-low reverse recovery charge
Reduced paralleling
Higher power density designs