Infineon N-Channel MOSFET, 176 A, 100 V PG-TO263-3 IPB020N10N5LFATMA1
- RS Stock No.:
- 258-3786P
- Mfr. Part No.:
- IPB020N10N5LFATMA1
- Brand:
- Infineon
Subtotal 1 unit (supplied on a continuous strip)*
£2.53
(exc. VAT)
£3.04
(inc. VAT)
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In Stock
- Plus 1,573 unit(s) shipping from 06 October 2025
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Units | Per unit |
---|---|
1 + | £2.53 |
*price indicative
- RS Stock No.:
- 258-3786P
- Mfr. Part No.:
- IPB020N10N5LFATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 176 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | PG-TO263-3 | |
Mounting Type | Surface Mount | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 176 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PG-TO263-3 | ||
Mounting Type Surface Mount | ||
The Infineon OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
High max. pulse current
High continuous pulse current
Rugged linear mode operation
Low conduction losses
High continuous pulse current
Rugged linear mode operation
Low conduction losses