Infineon N-Channel MOSFET, 68 A, 120 V PG-TDSON-8 BSC120N12LSGATMA1
- RS Stock No.:
- 258-0697P
- Mfr. Part No.:
- BSC120N12LSGATMA1
- Brand:
- Infineon
Subtotal 2 units (supplied on a continuous strip)*
£2.78
(exc. VAT)
£3.34
(inc. VAT)
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In Stock
- 4,974 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 2 + | £1.39 |
*price indicative
- RS Stock No.:
- 258-0697P
- Mfr. Part No.:
- BSC120N12LSGATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 68 A | |
| Maximum Drain Source Voltage | 120 V | |
| Package Type | PG-TDSON-8 | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 68 A | ||
Maximum Drain Source Voltage 120 V | ||
Package Type PG-TDSON-8 | ||
Mounting Type Surface Mount | ||
The Infineon OptiMOS 3 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The devices low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.
Low gate charge
Lower output charge
Logic level compatibility
Higher power density designs
Higher switching frequency
Lower output charge
Logic level compatibility
Higher power density designs
Higher switching frequency
