Infineon HEXFET N-Channel MOSFET, 100 A, 30 V PQFN 5mm x 6mm IRFH5302TRPBF
- RS Stock No.:
- 257-9372
- Mfr. Part No.:
- IRFH5302TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4000 units)*
£1,388.00
(exc. VAT)
£1,664.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,000 unit(s) ready to ship
- Plus 999,992,000 unit(s) shipping from 13 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 + | £0.347 | £1,388.00 |
*price indicative
- RS Stock No.:
- 257-9372
- Mfr. Part No.:
- IRFH5302TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PQFN 5mm x 6mm | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PQFN 5mm x 6mm | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
The Infineon IRFH series is the 30V single n channel strong IRFET power mosfet in a PQFN 5x6 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Industry standard surface mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
