Infineon HEXFET N-Channel MOSFET, 60 A, 60 V TO-220AB IRF60B217
- RS Stock No.:
- 257-9294P
- Mfr. Part No.:
- IRF60B217
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied in a tube)*
£26.80
(exc. VAT)
£32.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,915 unit(s) shipping from 06 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 120 | £0.536 |
| 125 - 245 | £0.496 |
| 250 - 495 | £0.464 |
| 500 + | £0.436 |
*price indicative
- RS Stock No.:
- 257-9294P
- Mfr. Part No.:
- IRF60B217
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 60 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
The Infineon IRF series is the 60V single n channel strong IRFET power mosfet in a TO 220 package. The strong IRFET power mosfet family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Industry standard through-hole power package
High current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
High current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
