Infineon HEXFET N-Channel MOSFET, 42 A, 100 V D-PAK IRFR3710ZTRPBF
- RS Stock No.:
- 257-5855P
- Mfr. Part No.:
- IRFR3710ZTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
£39.85
(exc. VAT)
£47.825
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,430 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £1.594 |
| 50 - 120 | £1.486 |
| 125 - 245 | £1.38 |
| 250 + | £0.708 |
*price indicative
- RS Stock No.:
- 257-5855P
- Mfr. Part No.:
- IRFR3710ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 42 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | D-PAK | |
| Mounting Type | PCB Mount | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 42 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type D-PAK | ||
Mounting Type PCB Mount | ||
The Infineon HEXFET power MOSFET is utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced process technology
Ultra low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
Multiple package options
Lead-free
Ultra low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
Multiple package options
Lead-free
