Infineon HEXFET N-Channel MOSFET, 180 A, 100 V D2PAK IRLS4030TRLPBF
- RS Stock No.:
- 257-5574
- Mfr. Part No.:
- IRLS4030TRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£1,144.00
(exc. VAT)
£1,376.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 14 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | £1.43 | £1,144.00 |
*price indicative
- RS Stock No.:
- 257-5574
- Mfr. Part No.:
- IRLS4030TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | D2PAK | |
| Mounting Type | PCB Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type D2PAK | ||
Mounting Type PCB Mount | ||
The Infineon HEXFET power MOSFET is optimized for logic level drive, very low RDS at 4.5V VGS, its used DC motor drive, high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Superior R*Q at 45V VGS
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free
