onsemi N-Channel MOSFET, 38 A, 650 V TO247-4L NTH4L075N065SC1
- RS Stock No.:
- 254-7672P
- Mfr. Part No.:
- NTH4L075N065SC1
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£59.70
(exc. VAT)
£71.60
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 08 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 99 | £5.97 |
| 100 + | £5.17 |
*price indicative
- RS Stock No.:
- 254-7672P
- Mfr. Part No.:
- NTH4L075N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 38 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO247-4L | |
| Mounting Type | Through Hole | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 38 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO247-4L | ||
Mounting Type Through Hole | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L
The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Used in telecommunication
High reliability at high temperature ambient
High speed switching and low capacitance
High reliability at high temperature ambient
High speed switching and low capacitance